AC SURFACE PHOTOVOLTAGES IN STRONGLY-INVERTED OXIDIZED P-TYPE SILICON-WAFERS

被引：81
作者：
MUNAKATA, C
NISHIMATSU, S
HONMA, N
YAGI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1984年 / 23卷 / 11期
关键词：
D O I：
10.1143/JJAP.23.1451
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1451 / 1461
页数：11
相关论文
共 46 条
[1]   DETERMINATION OF SURFACE STATE ENERGY POSITIONS BY SURFACE PHOTOVOLTAGE SPECTROMETRY - CDS [J].
BALESTRA, C ;
LAGOWSKI, J ;
GATOS, HC .
SURFACE SCIENCE, 1971, 26 (01) :317-&
[2]   SURFACE BARRIERS AND SURFACE CONDUCTANCE [J].
BARDEEN, J ;
MORRISON, SR .
PHYSICA, 1954, 20 (10) :873-884
[3]   COMBINED MEASUREMENTS OF FIELD EFFECT, SURFACE PHOTO-VOLTAGE AND PHOTOCONDUCTIVITY [J].
BRATTAIN, WH ;
GARRETT, CGB .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05) :1019-1040
[4]  
BRATTAIN WH, 1953, AT&T TECH J, V32, P1
[5]  
BROUWER G, 1963, PHILIPS RES REP, V18, P432
[6]   SPECTRAL DEPENDENCE OF SURFACE PHOTOVOLTAGE IN CDS [J].
CHANNON, MA ;
MALTBY, JR ;
REED, CE ;
SCOTT, CG .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (03) :L39-L41
[7]   CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].
DEAL, BE ;
SKLAR, M ;
GROVE, AS ;
SNOW, EH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :266-+
[8]  
FRANKL DR, 1966, SURF SCI, V6, P115
[9]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[10]   DISTRIBUTION AND CROSS-SECTIONS OF FAST STATES ON GERMANIUM SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05) :1041-1058
12345