DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI

被引：128

作者：

SEIDEL, TE ^{[1
]}

MEEK, RL ^{[1
]}

CULLIS, AG ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 02期

关键词：

D O I：

10.1063/1.321664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：600 / 609

页数：10

共 17 条

[1] GETTERING RATES OF VARIOUS FAST-DIFFUSING METAL IMPURITIES AT ION-DAMAGED LAYERS ON SILICON [J].

BUCK, TM ;

HSIEH, CM ;

POATE, JM ;

PICKAR, KA .

APPLIED PHYSICS LETTERS, 1972, 21 (10) :485-&

[2]

CHADDERTON LT, 1971, ION IMPLANTATION, P31

[3] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J].

CROWDER, BL ;

MOREHEAD, FF .

APPLIED PHYSICS LETTERS, 1969, 14 (10) :313-&

[4]

DASH S, 1970, NBS337 SPEC PUBL, P202

[5]

DAVIDSON SM, 1971, ION IMPLANTATION, P51

[6] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[7] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J].

HSIEH, CM ;

MATHEWS, JR ;

SEIDEL, HD ;

PICKAR, KA ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :238-240

[8]

HUNTLEY FA, 1973, J ELECTROCHEM SOC, V120, P914

[9]

MAYER JW, 1970, ION IMPLANTATION SEM, pCH4

[10] PRELIMINARY RESULTS OF AN ION SCATTERING STUDY OF PHOSPHOSILICATE GLASS GETTERING [J].

MEEK, RL ;

GIBBON, CF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) :444-447

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