SI DIFFUSION IN AL DURING IMPLANTATION AS PROBED BY (P,GAMMA) RESONANCE BROADENING

被引：3
作者：
ANTTILA, A [1 ]
HIRVONEN, J [1 ]
机构：
[1] UNIV HELSINKI,DEPT PHYS,HELSINKI,FINLAND
来源：
THIN SOLID FILMS | 1976年 / 33卷 / 02期
关键词：
D O I：
10.1016/0040-6090(76)90089-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：L13 / L14
页数：2
相关论文
共 3 条
[1]   ENERGY-LEVELS OF A = 21-44 NUCLEI .5. [J].
ENDT, PM ;
VANDERLE.C .
NUCLEAR PHYSICS A, 1973, A214 (OCT29) :1-625
[2]   RADIATION-ENHANCED DIFFUSION OF BORON IN GERMANIUM DURING ION-IMPLANTATION [J].
GUSEVA, MI ;
MANSUROVA, AN .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1973, 20 (03) :207-210
[3]   DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].
MCCALDIN, JO ;
SANKUR, H .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&
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