APPLICATION OF TOTAL SELECTIVE SOLVENT-EXTRACTION OF GERMANIUM, PHOSPHORUS AND SILICON TO SIMULTANEOUS DETERMINATION OF ARSENIC, GERMANIUM, PHOSPHORUS AND SILICON

被引：3

作者：

PEDROSA, MJ ^{[1
]}

PAUL, J ^{[1
]}

机构：

[1] UNIV BRIDGEPORT,CHEM DEPT,BRIDGEPORT,CT 06602

来源：

MICROCHEMICAL JOURNAL | 1974年 / 19卷 / 03期

关键词：

D O I：

10.1016/0026-265X(74)90131-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：314 / 318

页数：5

共 50 条

[31] ZIRCONIUM IODIDE CLUSTERS THAT ENCAPSULATE SILICON, GERMANIUM, PHOSPHORUS, OR PYREX [J].

ROSENTHAL, G ;

CORBETT, JD .

INORGANIC CHEMISTRY, 1988, 27 (01) :53-56

[32] EXCHANGE REACTIONS IN VOLATILE ISOCYANATES AND ISOTHIOCYANATES OF SILICON, GERMANIUM AND PHOSPHORUS [J].

ANDERSON, HH .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1953, 75 (07) :1576-1578

[33] THE ACTIVATION-ENERGY OF PHOSPHORUS DONORS IN SILICON-RICH SILICON GERMANIUM ALLOYS [J].

KRUSSMANN, R ;

VOLLMER, H ;

LABUSCH, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 118 (01) :275-282

[34] PROPERTIES AND ANALYTICAL APPLICATIONS OF HETEROPOLYMOLYBDATES OF PHOSPHORUS, ARSENIC, SILICON AND GERMANIUM .2. MODIFICATIONS OF HETEROPOLY ACIDS [J].

HALASZ, A ;

PUNGOR, E .

TALANTA, 1971, 18 (06) :569-&

[35] FORCE CONSTANTS AND BOND LENGTHS IN OXYGEN COMPOUNDS OF SILICON, GERMANIUM, AND PHOSPHORUS [J].

LAZAREV, AN ;

MIRGORODSKII, AP ;

IGNATEV, IS ;

MULDAGALIEV, KK .

JOURNAL OF STRUCTURAL CHEMISTRY, 1975, 16 (04) :541-544

[36] REPLACEMENT OF ELEMENTS ATTACHED TO SILICON, GERMANIUM AND PHOSPHORUS IN SOME OF THEIR VOLATILE COMPOUNDS [J].

ANDERSON, HH .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1950, 72 (06) :2761-2762

[37] Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon [J].

Aleksandrov, OV ;

Afonin, NN .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (02) :139-143

[38] Diffusion of silicon and phosphorus into germanium as studied by secondary ion mass spectrometry [J].

Sodervall, U ;

Friesel, M .

DEFECT AND DIFFUSION FORUM, 1997, 143 :1053-1058

[39] Electrical properties of boron and phosphorus doped polycrystalline silicon germanium films [J].

Dong, L ;

Yue, RF ;

Yan, W ;

Huang, WT ;

Liu, LT .

INTERNATIONAL JOURNAL OF NONLINEAR SCIENCES AND NUMERICAL SIMULATION, 2002, 3 (3-4) :677-680

[40] APPLICATION OF LIFSHITZ-SLYOZOV THEORY TO PRECIPITATION OF PHOSPHORUS IN SILICON-GERMANIUM THERMOELECTRIC ALLOYS [J].

BURGESS, EL ;

NASBY, RD .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2375-2381

← 1 2 3 4 5 →