HIGH-TEMPERATURE OPERATION OF 637 NM ALGAINP MQW LASER-DIODES WITH QUATERNARY QWS GROWN ON MISORIENTED SUBSTRATES

被引：1
|
作者：
TANAKA, T
YANAGISAWA, H
YANO, S
MINAGAWA, S
机构：
[1] Central Research Laboratory, Hitachi Ltd., Tokyo 1875
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 01期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19930016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of substrate misorientation and the optimisation of QWs in AlGaInP MQW LDs in the wavelength range around 630 nm are examined in pursuit of high-temperature operation. Continuous-wave lasing up to 88-degrees-C is attained for a narrow-strip quaternary MQW LD emitting at 637 nm, which is grown on 7-degrees-off misoriented substrates.
引用
收藏
页码：24 / 26
页数：3
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