SPIN-POLARIZED ELECTRON-TUNNELING IN NI/AL2O3/CO JUNCTION AND LARGE MAGNETORESISTANCE OF NI/CO DOUBLE-LAYERS

被引：39

作者：

SUEZAWA, Y ^{[1
]}

TAKAHASHI, F ^{[1
]}

GONDO, Y ^{[1
]}

机构：

[1] YOKOHAMA NATL UNIV, FAC ENGN, HODOGAYA KU, YOKOHAMA, KANAGAWA 240, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10A期

关键词：

SPIN-POLARIZED ELECTRON; TUNNELING; TUNNEL JUNCTION; MAGNETIC VALVE EFFECT; GIANT MAGNETORESISTANCE; MULTILAYERS;

D O I：

10.1143/JJAP.31.L1415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetic field dependence of the tunnel resistance of Ni/Al2O3/Co junctions and the resistance across the interfaces of Ni/Co junctions was studied. Both types of junctions showed the magnetic valve effect, in which junction resistances vary with the angle between the magnetizations of Ni and Co electrodes. For Ni/Co junctions, additional peaks were observed on the resistance versus magnetic field curves at the coercive fields of Co electrodes, suggesting the effect of magnetic domains formed in the junction area in the magnetization process. The relative change in resistance for the Ni/Co junction showed a large value of 16.4%.

引用

页码：L1415 / L1416

页数：2

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