INPLANE ANISOTROPY STUDIES IN AMORPHOUS FEBSI FILMS

被引：5
作者：
KRISHNAN, R [1 ]
TESSIER, M [1 ]
CONTRERAS, MC [1 ]
IGLESIAS, I [1 ]
机构：
[1] UNIV OVIEDO, DEPT FIS, E-33007 OVIEDO, SPAIN
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1992年 / 28卷 / 05期
关键词：
D O I：
10.1109/20.179514
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Uniaxial anisotropy field, H(k), and local anisotropy fluctuation represented as magnetic ripple, S, were studied as a function of argon pressure during deposition for the RF sputtered amorphous FeBSi films. Influence of P(Ar) on H(k), K(loc), and S (structure constant) is discussed. The magnitude of S and K(loc) d3/2 were found to be strongly dependent on P(Ar).
引用
收藏
页码：2427 / 2429
页数：3
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