PREPARATION AND C-V CHARACTERISTIC OF THE GE-MOS STRUCTURE USING PLASMA-ANODIZED FILM AS GATE INSULATOR

This paper reports the techniques of growing uniform native oxide films on Ge(111) wafers by the method of high-frequency (500 kHz) oxygen-plasma anodization and of preparing the Ge-MOS structure using oxygen-plasma-anodized (OPA) film as gate insulator. The high-frequency C-V characteristics of prepared Ge-MOS structures show that the fixed oxide charge density near the OPA film-Ge interface is about 10(11) cm-2. It is also shown that the breakdown electrical field intensity of OPA film is of the order of 10(6) V cm-1. These results indicate that it is feasible to prepare Ge-MOS structures using the plasma-anodized film on germanium.