EPITAXIAL CRYSTAL-GROWTH BY SPUTTER DEPOSITION - APPLICATIONS TO SEMICONDUCTORS .1.

被引:64
作者
GREENE, JE [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 1983年 / 11卷 / 01期
关键词
D O I
10.1080/01611598308243645
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:47 / 97
页数:51
相关论文
共 342 条
[1]   ELECTRICAL AND STRUCTURAL-PROPERTIES OF THIN GOLD-FILMS OBTAINED BY VACUUM EVAPORATION AND SPUTTERING [J].
ADAMOV, M ;
PEROVIC, B ;
NENADOVIC, T .
THIN SOLID FILMS, 1974, 24 (01) :89-100
[2]   EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J].
ADAMSKY, RF .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4301-&
[3]   HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J].
ALEKSANDROV, LN ;
LOVYAGIN, RN ;
PCHELYAKOV, OP ;
STENIN, SI .
JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :298-301
[4]  
ALEKSANDROV LN, 1979, PHYS STATUS SOLIDI A, V54, P463, DOI 10.1002/pssa.2210540204
[5]   STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J].
ALEKSANDROV, LN ;
LOVYAGIN, RN .
THIN SOLID FILMS, 1974, 20 (01) :1-10
[6]  
ALEKSANDROV LN, 1974, JAPAN J APPL PHYS S, V2, P609
[7]   COLLECTION AND SPUTTERING EXPERIMENTS WITH NOBLE GAS IONS [J].
ALMEN, O ;
BRUCE, G .
NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02) :257-278
[8]  
ALTSTETTER CJ, 1976, J NUCL MATER, V63, P235, DOI 10.1016/0022-3115(76)90332-9
[9]   PIEZOELECTRIC ZNO TRANSDUCERS PRODUCED BY R.F. MAGNETRON SPUTTERING [J].
AMBERSLEY, MD ;
PITT, CW .
THIN SOLID FILMS, 1981, 80 (1-3) :183-195
[10]   ION MICROPROBE MASS ANALYZER [J].
ANDERSEN, CA ;
HINTHORNE, JR .
SCIENCE, 1972, 175 (4024) :853-+