A DOPING DEPENDENT THRESHOLD VOLTAGE MODEL OF UNIFORMLY DOPED SHORT-CHANNEL SYMMETRIC DOUBLE-GATE (DG) MOSFET'S

被引：0
作者：
Tiwari, P. K. [1 ]
Dubey, S. [1 ]
Jit, S. [1 ]
机构：
[1] Banaras Hindu Univ, Inst Technol, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India
来源：
JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2011年 / 3卷 / 01期
关键词：
DG MOSFET; SHORT-CHANNEL EFFECTS; BAND GAP NARROWING; QUANTUM MECHANICAL EFFECTS; THRESHOLD VOLTAGE;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The paper presents a doping dependent threshold voltage model for the short-channel double-gate (DG) MOSFETs. The channel potential has been determined by solving the two-dimensional (2D) Poisson's equation using the parabolic potential approximation in the vertical direction of channel. Threshold voltage sensitivity on acceptor doping and device parameters is discussed in detail. The threshold voltage expression has been modified by incorporating the effects of band gap narrowing for highly doped DG MOSFETs. Quantum mechanical corrections have also been employed in the threshold voltage model. The theoretical results have been compared with the ATLASTM simulation results. The present model is found to be valid for acceptor doping variation from 10(14) cm(-3) to 5 x 10(18)cm(-3).
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页码：963 / 971
页数：9
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