QUANTUM-WELL GAAS/ALGAAS SHALLOW-DONOR FAR-INFRARED PHOTOCONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

GOODHUE, WD ^{[1
]}

MUELLER, ER ^{[1
]}

LARSEN, DM ^{[1
]}

WALDMAN, J ^{[1
]}

CHAI, YH ^{[1
]}

LAI, SC ^{[1
]}

JOHNSON, GD ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,LOWELL,MA 01854

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconductors utilizing planar-doped silicon shallow donors in GaAs quantum wells formed with AlGaAs barriers have been fabricated and measured to have far-infrared (FIR) resonant-wavelength responsivities of approximately 1 V W-1, with noise equivalent power values of approximately 1 X 10(-7) W Hz-1/2 at 4 K. The technology makes possible the use of FIR photoconductive magnetospectroscopy to measure the well position of sheet-doped silicon ions when incorporated at doping levels below 1 X 10(16) CM-3. A comparison of the measured position of the ions with the intended position reveals a discrepancy that can be linked to the growth parameters used to produce the structure.

引用

页码：941 / 944

页数：4

共 10 条

[1] EXCITED-STATE SPECTROSCOPY OF CONFINED SHALLOW DONOR IMPURITIES IN A MULTI-QUANTUM-WELL [J].