SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM

被引:117
作者
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
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D O I
10.1149/1.2426719
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:733 / &
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[2]   PYROLYTIC DEPOSITION OF SILICON DIOXIDE FOR 600-DEGREES-C THIN FILM CAPACITORS [J].
BARNES, CR ;
GEESNER, CR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) :361-362
[3]   SILICON NITRIDE THIN FILM DIELECTRIC [J].
BARNES, CR ;
GEESNER, CR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (02) :98-100
[4]  
BEAN K, 1963, J ELECTROCHEM SOC, V110, pC265
[5]  
BEREZHNOI AS, 1960, SILICON BINARY SYSTE
[6]  
BROWN GE, TO BE PUBLISHED
[7]   IN SITU ETCHING OF SILICON SUBSTRATES PRIOR TO EPITAXIAL GROWTH [J].
CHU, TL ;
GRUBER, GA ;
STICKLER, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) :156-&
[8]   PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].
DOO, VY ;
NICHOLS, DR ;
SILVEY, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1279-&
[9]  
DOO VY, 1966, OCT EL SOC M PHIL
[10]  
HU SM, 1965, OCT EL SOC M BUFF