THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM

被引：51

作者：

GIBSON, JM

BEAN, JC

POATE, JM

TUNG, RT

机构：

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(82)90095-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：99 / 108

页数：10

共 8 条

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 37 (07) :643-646

[2] THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH [J].

COWLEY, JM ;

MOODIE, AF .

ACTA CRYSTALLOGRAPHICA, 1957, 10 (10) :609-619

[3]

FOLL H, 1981, J APPL PHYS, V52, P250

[4]

GIBSON JM, 1981, I PHYS C SER, V60, P415

[5]

HIRSCH PB, 1965, ELECTRON MICROSCOPY

[6]

Matthews J.W, 1975, EPITAXIAL GROWTH

[7] EPITAXIAL SILICIDES [J].

TUNG, RT ;

POATE, JM ;

BEAN, JC ;

GIBSON, JM ;

JACOBSON, DC .

THIN SOLID FILMS, 1982, 93 (1-2) :77-90

[8] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J].

TUNG, RT ;

BEAN, JC ;

GIBSON, JM ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :684-686

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