THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM

被引：51

作者：

GIBSON, JM

BEAN, JC

POATE, JM

TUNG, RT

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(82)90095-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：99 / 108

页数：10

共 8 条

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[2] THE SCATTERING OF ELECTRONS BY ATOMS AND CRYSTALS .1. A NEW THEORETICAL APPROACH
COWLEY, JM
MOODIE, AF
[J]. ACTA CRYSTALLOGRAPHICA, 1957, 10 (10): : 609 - 619
[3] FOLL H, 1981, J APPL PHYS, V52, P250
[4] GIBSON JM, 1981, I PHYS C SER, V60, P415
[5] HIRSCH PB, 1965, ELECTRON MICROSCOPY
[6] Matthews J.W, 1975, EPITAXIAL GROWTH
[7] EPITAXIAL SILICIDES
TUNG, RT
POATE, JM
BEAN, JC
GIBSON, JM
JACOBSON, DC
[J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90
[8] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111)
TUNG, RT
BEAN, JC
GIBSON, JM
POATE, JM
JACOBSON, DC
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 684 - 686