STUDY OF AG ADDITION TO YBA2CU3O7-X FILMS PREPARED USING ELECTROPHORETIC DEPOSITION

被引：8
|
作者：
FUJIMOTO, M
NOJIMA, H
SHINTAKU, H
TANIGUCHI, H
NAGATA, M
KOBA, M
机构：
[1] Functional Devices Laboratories, Sharp Corporation, Kashiwa, Chiba, 211
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 4B期
关键词：
ELECTROPHORETIC DEPOSITION; HIGH T(C) OXIDE SUPERCONDUCTOR; YBA2CU3O7-X AG DOPING; AG2O; CU SUBSTRATE; GRAIN GROWTH;
D O I：
10.1143/JJAP.32.L576
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ag addition to YBa2Cu3O7-x superconducting films prepared using electrophoretic deposition on Cu substrates was investigated. The electrical characteristics of the films, such as zero-resistance temperature (T(c)), critical current density (J(c)), and resistivity at room temperature (rho) were greatly improved by Ag doping. The T(c) of 94 K was attained with the electrophoretic Ag-doped film on Cu substrate. By doping with Ag, the grain growth was enhanced but no shift in YBa2Cu3O7-x peaks was observed in X-ray diffraction patterns. From the electron probe microanalysis of the sample cross section, the doped Ag was found to exist in the region devoid of YBa2Cu3O7-x
引用
收藏
页码：L576 / L579
页数：4
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