2ND-ORDER OPTICAL NONLINEARITIES OF RADIO-FREQUENCY SPUTTER-DEPOSITED AIN THIN-FILMS

被引：32

作者：

LIN, WP ^{[1
]}

LUNDQUIST, PM ^{[1
]}

WONG, GK ^{[1
]}

RIPPERT, ED ^{[1
]}

KETTERSON, JB ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarized second harmonic generation measurements were performed on AlN films deposited on (100) sapphire substrates by the reactive rf sputtering technique. The bulk effective second order nonlinearity observed in these films is typically about 6 x 10(-9) esu at 1.06 mum, several times larger than that of quartz or KTP. The tensorial properties of the nonlinearity are consistent with the crystal symmetry of AlN and the microcrystallinity of these films.

引用

页码：2875 / 2877

页数：3

共 6 条

[1] BASAL ORIENTATION ALUMINUM NITRIDE GROWN AT LOW-TEMPERATURE BY RF DIODE SPUTTERING [J].