PREPARATION OF PLASMA CHEMICAL VAPOR-DEPOSITION SILICON-NITRIDE FILMS FROM SIH2F2 AND NH3 SOURCE GASES

被引：3
|
作者：
WATANABE, N
YOSHIDA, M
JIANG, YC
NOMOTO, T
ABIKO, I
机构：
[1] Research Laboratory OKI Electric Industry Co., Ltd., Hachioji-shi, Tokyo, 193, 550-5, Higashiasakawa-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期
关键词：
FLUORINATED SILICON NITRIDE; SILICON NITRIDE; FLUORINE; DIFLUOROSILANE; PLASMA CVD;
D O I：
10.1143/JJAP.30.L619
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fluorinated silicon nitride films are prepared by plasma chemical vapor deposition (PCVD) of the difluorosilane (SiH2F2)-ammonia (NH3) system. The films deposited with varied gas-phase composition were characterized by means of infrared spectroscopy (IR) and Auger-electron spectroscopy (AES). It is shown that the deposition rate, refractive index and density of silicon nitride films depend on the SiH2F2-NH3 ratio of the input gases. It is further shown that the stress, resistivity and dielectric breakdown strength do not depended on it. The resistivity and breakdown strength were observed to be as high as 10(16) OMEGA.cm and 5 MV/cm, respectively.
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页码：L619 / L621
页数：3
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