ELECTRON-GAS HEATING UNDER SPIN-FLIP RAMAN-SCATTERING CONDITIONS IN N-INSB

Spin-flip resonance induced magnetoresistance is studied of n-type InSb in quantising magnetic fields. The sample is held at 2 K in magnetic fields up to 1. 3 T. Double-differentiation techniques are used to detect weak signals. It is shown that magnetoresistance changes because of electron gas heating, additionally the heating of phonons must be taken into account as well. Simultaneous measurements of the spin-flip Raman gain and photoconductive response make it possible to determine the energy relaxation time tau // epsilon approximately equals 0. 9 multiplied by 10** minus **6 s which remains approximately constant in the magnetic fields.