ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON

被引：265
作者：
JACKSON, WB
KELSO, SM
TSAI, CC
ALLEN, JW
OH, SJ
机构：
来源：
PHYSICAL REVIEW B | 1985年 / 31卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.31.5187
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5187 / 5198
页数：12
相关论文
共 53 条
[1]   INTERBAND ABSORPTION-SPECTRA OF DISORDERED SEMICONDUCTORS IN THE COHERENT POTENTIAL APPROXIMATION [J].
ABE, S ;
TOYOZAWA, Y .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (07) :2185-2194
[2]  
AMER NM, 1984, SEMICONDUCT SEMIMET, P83
[3]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[4]   DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA ;
KINSBRON, E .
PHYSICAL REVIEW B, 1984, 29 (02) :768-779
[5]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[6]   METHODS FOR DRIFT STABILIZATION AND PHOTOMULTIPLIER LINEARIZATION FOR PHOTOMETRIC ELLIPSOMETERS AND POLARIMETERS [J].
ASPNES, DE ;
STUDNA, AA .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (03) :291-297
[7]  
BAUER RS, 1974, TETRAHEDRALLY BONDED, P26
[8]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[9]   ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J].
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1966, 142 (02) :530-&
[10]  
CARDONA M, 1972, ATOMIC STRUCTURE PRO
123456