SECONDARY ION MASS-SPECTROSCOPY DEPTH PROFILES OF HETEROJUNCTION BIPOLAR-TRANSISTOR EMITTER BASE HETEROJUNCTIONS GROWN BY LOW-PRESSURE OMVPE

被引：36
作者：
ENQUIST, PM
机构：
[1] Research Triangle Inst, United States
来源：
JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期
关键词：
Crystals--Epitaxial Growth - Semiconducting Gallium Arsenide--Doping - Zinc and Alloys;
D O I：
10.1016/0022-0248(88)90596-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Depth profiles of zinc in heterojunction bipolar transistor emitter-base heterojunctions have been studied with secondary ion mass spectroscopy in order to evaluate zinc diffusion. The tellurium doping concentration used in the emitter is found to be the parameter primarily responsible for inducing zinc diffusion. Base doping densities about 1020 cm-3 were achieved without significant zinc diffusion.
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页码：637 / 645
页数：9
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