SPIN-LATTICE RELAXATION IN COMPENSATED N-TYPE SILICON

被引：7

作者：

IGO, T

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.21.874

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：874 / &

共 24 条

[1] DONOR ELECTRON SPIN RELAXATION IN SILICON [J].

ABRAHAMS, E .

PHYSICAL REVIEW, 1957, 107 (02) :491-496

[2] ON THE INTERACTION OF NUCLEAR SPINS IN A CRYSTALLINE LATTICE [J].

BLOEMBERGEN, N .

PHYSICA, 1949, 15 (3-4) :386-426

[3]

Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[4] RAMAN SPIN-LATTICE RELAXATION OF SHALLOW DONORS IN SILICON [J].

CASTNER, TG .

PHYSICAL REVIEW, 1963, 130 (01) :58-&

FEHER, G ;

GERE, EA .

PHYSICAL REVIEW, 1959, 114 (05) :1245-1256

HONIG, A ;

LEVITT, R .

[7] ELECTRON SPIN-LATTICE RELAXATION IN PHOSPHORUS-DOPED SILICON [J].

HONIG, A ;

STUPP, E .

PHYSICAL REVIEW, 1960, 117 (01) :69-83

[8]

HONIG A, 1958, PHYS REV LETT, V1, P275

[9]

HONIG A, PRIVATE COMMUNICATIO

IGO, T .