STRUCTURAL DISORDER MODEL OF AMORPHOUS-SEMICONDUCTORS - GE AND SI

[1] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[2] STRUCTURAL DISORDER AND ELECTRONIC PROPERTIES OF AMORPHOUS SILICON [J]. PHYSICAL REVIEW B, 1977, 16 (12): : 5488 - 5498

[3] CHOPRA KL, 1981, PHYSICS SEMICONDUCTO

[4] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483

[5] CONNEL GAN, 1974, PHYS REV, V39, P5323

[6] BOND CHARGE MODEL OF AMORPHOUS TETRAHEDRALLY COORDINATED SOLIDS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 537 - 542

[7] A TOPOLOGICAL-DYNAMICAL MODEL OF AMORPHYCITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 42 (1-3) : 87 - 95

[8] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[9] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 921 - 926

[10] ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (02): : 501 - &

[1] SPECIFIC HEAT AND HEAT OF CRYSTALLIZATION OF AMORPHOUS GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4214 - &

[2] STRUCTURAL DISORDER AND ELECTRONIC PROPERTIES OF AMORPHOUS SILICON [J]. PHYSICAL REVIEW B, 1977, 16 (12): : 5488 - 5498

[3] CHOPRA KL, 1981, PHYSICS SEMICONDUCTO

[4] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483

[5] CONNEL GAN, 1974, PHYS REV, V39, P5323

[6] BOND CHARGE MODEL OF AMORPHOUS TETRAHEDRALLY COORDINATED SOLIDS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 537 - 542

[7] A TOPOLOGICAL-DYNAMICAL MODEL OF AMORPHYCITY [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 42 (1-3) : 87 - 95

[8] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[9] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 921 - 926

[10] ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (02): : 501 - &