EARLY-INTERCEPT VOLTAGE - PARAMETER OF VOLTAGE-DRIVEN BJTS

被引:8
作者
HART, BL
BARKER, RWJ
机构
[1] NE LONDON POLYTECH,DAGENHAM RM8 2AS,ESSEX,ENGLAND
[2] UNIV SHEFFIELD,SHEFFIELD S1 3JD,ENGLAND
关键词
D O I
10.1049/el:19760136
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:174 / 175
页数:2
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[2]   THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J].
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ROSS, IM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01) :72-78
[3]  
PHILIPS AB, 1962, TRANSISTOR ENGINEERI, P115