MONTE-CARLO SIMULATION OF THE PHOTOELECTRON CROSSTALK IN SILICON IMAGING DEVICES

被引：30
|
作者：
LAVINE, JP
CHANG, WC
ANAGNOSTOPOULOS, CN
BURKEY, BC
NELSON, ET
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 10期
关键词：
D O I：
10.1109/T-ED.1985.22243
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2087 / 2091
页数：5
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