CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：72
|
作者：
SOGA, T [1 ]
HATTORI, S [1 ]
SAKAI, S [1 ]
TAKEYASU, M [1 ]
UMENO, M [1 ]
机构：
[1] NAGOYA UNIV,SCH MED,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期
关键词：
D O I：
10.1063/1.335363
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4578 / 4582
页数：5
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