CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：72

作者：

SOGA, T ^{[1
]}

HATTORI, S ^{[1
]}

SAKAI, S ^{[1
]}

TAKEYASU, M ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA UNIV,SCH MED,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.335363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4578 / 4582

页数：5

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