SILICON DONOR STATES IN HEAVILY DOPED THIN GAAS-ALAS(001) SUPERLATTICES

被引：12
|
作者：
NELSON, JS
FONG, CY
BATRA, IP
PICKETT, WE
KLEIN, BM
机构：
[1] IBM CORP, ALMADEN RES CTR, SAN JOSE, CA 95120 USA
[2] USN, RES LAB, CONDENSED MATTER PHYS BRANCH, WASHINGTON, DC 20375 USA
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.37.10203
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：10203 / 10211
页数：9
相关论文
共 50 条
  • [1] Pressure sensors based on silicon doped GaAs-AlAs superlattices
    Robert, JL
    Bosc, F
    Sicart, J
    Mosser, V
    Lasseur, J
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) : 2941 - 2946
  • [2] LOCAL DENSITY OF STATES OF SILICON IMPURITY IN LIGHTLY AND HEAVILY DOPED ALAS/GAAS SUPERLATTICES
    WANG, EG
    ZHANG, LY
    WANG, HY
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 5 (03): : 371 - 375
  • [3] DX CENTERS IN ALAS AND GAAS-ALAS SELECTIVELY DOPED SUPERLATTICES
    ABABOU, S
    MARCHAND, JJ
    MAYET, L
    GUILLOT, G
    MOLLOT, F
    JOURNAL DE PHYSIQUE III, 1991, 1 (07): : 1301 - 1309
  • [4] CONFINED STATES AND STABILITY OF GAAS-ALAS SUPERLATTICES
    BATRA, IP
    CIRACI, S
    NELSON, JS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1300 - 1304
  • [5] Investigation of DX center in silicon doped GaAs-AlAs short period superlattices
    Bosc, F
    Sicart, J
    Robert, JL
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6520 - 6525
  • [6] Evidence of silicon interdiffusion in selectively doped GaAs-AlAs superlattices by Hall measurements
    Sellitto, P.
    Jeanjean, P.
    Sicart, J.
    Robert, J.L.
    Planel, R.
    Journal of Applied Physics, 1993, 74 (12):
  • [7] EVIDENCE OF SILICON INTERDIFFUSION IN SELECTIVELY DOPED GAAS-ALAS SUPERLATTICES BY HALL MEASUREMENTS
    SELLITTO, P
    JEANJEAN, P
    SICART, J
    ROBERT, JL
    PLANEL, R
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7166 - 7172
  • [8] SELF-CONSISTENT STUDY OF CONFINED STATES IN THIN GAAS-ALAS SUPERLATTICES
    CIRACI, S
    BATRA, IP
    PHYSICAL REVIEW B, 1987, 36 (02): : 1225 - 1232
  • [9] PIEZOSPECTROSCOPY OF GAAS-ALAS SUPERLATTICES
    LEFEBVRE, P
    GIL, B
    MATHIEU, H
    PLANEL, R
    PHYSICAL REVIEW B, 1989, 40 (11) : 7802 - 7813
  • [10] Electron mobility and charge correlation in silicon doped GaAs-AlAs shor period superlattices
    2000, American Institute of Physics Inc. (88)
12345