OBSERVATION OF DOUBLE INJECTION IN LONG P+PN+ DIFFUSED SILICON JUNCTIONS AND SOME RELATED EFFECTS

被引：9
作者：
DESHPANDE, RY
机构：
来源：
SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 03期
关键词：
D O I：
10.1016/0038-1101(66)90111-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：265 / +
页数：1
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