ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES

被引：111
作者：
AMITH, A
KUDMAN, I
STEIGMEIER, EF
机构：
来源：
PHYSICAL REVIEW | 1965年 / 138卷 / 4A期
关键词：
D O I：
10.1103/PhysRev.138.A1270
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1270 / +
页数：1
相关论文
共 44 条
[1]   APPARATUS FOR THE MEASUREMENT OF THE THERMAL DIFFUSIVITY OF SOLIDS AT HIGH TEMPERATURES [J].
ABELES, B ;
CODY, GD ;
BEERS, DS .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) :1585-1592
[2]   THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J].
ABRAHAMS, MS ;
BRAUNSTEIN, R ;
ROSI, FD .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) :204-210
[3]  
AD Stuces, 1961, BRIT J APPL PHYS, V12, p
[4]  
AMITH A, 1964, 7TH P INT C PHYS SEM, P393
[5]   EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J].
BLANC, J ;
WEISBERG, LR ;
BUBE, RH .
PHYSICAL REVIEW LETTERS, 1962, 9 (06) :252-&
[6]   THEORY OF MOBILITY OF ELECTRONS IN SOLIDS [J].
BLATT, FJ .
SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 :199-363
[7]   NERNST EFFECT IN N-TYPE GAAS [J].
CARLSON, RO ;
EHRENREICH, H ;
SILVERMAN, SJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) :422-&
[8]   THEORETICAL TRANSPORT COEFFICIENTS FOR POLAR SEMICONDUCTORS [J].
DELVES, RT .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472) :572-576
[9]   THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K [J].
DISMUKES, JP ;
EKSTROM, E ;
BEERS, DS ;
STEIGMEIER, EF ;
KUDMAN, I .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :2899-&
[10]  
EDMOND JT, 1957, REPORT M SEMICONDUCT, P109
12345