PHOTOINDUCED ABSORPTION IN AMORPHOUS-SILICON

被引：34

作者：

TAUC, J

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1982年 / 22卷

关键词：

D O I：

10.1007/BFb0107936

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：85 / 113

页数：29

共 50 条

[21] ELIMINATING INTERFERENCE EFFECTS IN PICOSECOND PHOTOINDUCED ABSORPTION DECAYS - APPLICATION TO INTRINSIC HYDROGENATED AMORPHOUS-SILICON
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[22] INVESTIGATION OF THE ABSORPTION-EDGE OF AMORPHOUS-SILICON
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[23] INTERBAND OPTICAL-ABSORPTION IN AMORPHOUS-SILICON
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[24] THEORY OF INFRARED-ABSORPTION IN AMORPHOUS-SILICON
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[25] PHOTOINDUCED STRUCTURAL-CHANGE IN THE DEFECTS IN A HYDROGENATED AMORPHOUS-SILICON
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[26] PHOTOINDUCED REVERSIBLE CHANGE OF TOPOLOGICAL DISORDER IN HYDROGENATED AMORPHOUS-SILICON
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[27] STABLE PHOTOINDUCED PARAMAGNETIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE
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[28] PHOTOINDUCED ESR IN AMORPHOUS-SILICON ALLOYED WITH VARIOUS AMOUNTS OF NITROGEN
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[29] STABLE PHOTOINDUCED PARAMAGNETIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE
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[30] OBSERVATION OF FIELD QUENCHING OF PHOTOINDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON
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