WO3 Thin Films Active in the IR Region

被引：0

作者：

Sauvet, K. ^{[1
,2
]}

Sauques, L. ^{[2
]}

Durand, O. ^{[3
]}

Perriere, J. ^{[4
]}

Ledeuil, J-B. ^{[5
]}

Gonbeau, D. ^{[5
]}

Rougier, A. ^{[1
]}

机构：

[1] Lab React & Chim Solides, UMR6007, 33 Rue St Leu, F-80039 Amiens, France

[2] Delegat Gen Armement, CEP, F-94114 Arcueil, France

[3] Thales, TRT, F-91767 Palaiseau, France

[4] Inst Nanosci, F-75015 Paris, France

[5] ECP, IPREM, UMR 5254, F-64053 Pau, France

来源：

SMART OPTICS | 2009年 / 55卷

关键词：

Electrochromism; thin films; tungsten oxide; Mid Infrared; Reflectance; TUNGSTEN-OXIDE; DEVICES;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper reports the enhancement of the electrochromic properties in the infrared, IR, region of radio frequency sputtered WO3 thin films thanks to a careful optimization of the deposition conditions. From the combination of various techniques of characterization, the optical performances, in particular, the contrast in reflectance between the inserted state and the deinserted one, upon cycling in H3PO4 liquid electrolyte, are correlated to the film morphology and composition. Films, grown in higher chamber pressure, exhibiting a lower density and a O/W ratio higher than 3, show the most promising behavior. Finally, first trends on the incorporation of the WO3 single layer in full electrochromic devices are discussed.

引用

页码：30 / +

页数：3

共 12 条

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