EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON

被引：96

作者：

HU, SM ^{[1
]}

PATRICK, WJ ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.321883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1869 / 1874

页数：6

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