EFFICIENCY OF ELECTRON-BEAM PROXIMITY EFFECT CORRECTION

被引:26
|
作者
GROVES, TR
机构
来源
关键词
D O I
10.1116/1.586595
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The trend of increasing pattern data volume, together with decreasing critical dimensions, causes correction of proximity effect to be continually more time consuming and expensive. A tradeoff exists between speed and accuracy. A given correction method may be judged efficient if the direct computational overhead needed to achieve a predetermined level of accuracy is small. Some basic principles relating to efficiency are derived. An optimal correction algorithm follows naturally from the analysis. Forward and backward scattering have greatly differing ranges, and correspondingly differing computational requirements. The two processes are easily separated analytically. Dose correction is used to offset backscattering, while edge displacement is used to offset forward scattering. The only direct computational overhead is the local pattern density. All other necessary parameters are precomputed, and accessed by memory lookup.
引用
收藏
页码:2746 / 2753
页数:8
相关论文
共 50 条
  • [21] Limitations of proximity-effect correction for electron-beam patterning of photonic crystals
    Wüest, R
    Hunziker, C
    Robin, F
    Strasser, P
    Erni, D
    Jäckel, H
    PHOTONICS: DESIGN, TECHNOLOGY, AND PACKAGING, 2004, 5277 : 186 - 197
  • [22] PROXIMITY EFFECT CORRECTION DATA-PROCESSING SYSTEM FOR ELECTRON-BEAM LITHOGRAPHY
    HARAFUJI, K
    MISAKA, A
    KAWAKITA, K
    NOMURA, N
    HAMAGUCHI, H
    KAWAMOTO, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01): : 133 - 142
  • [23] AN APPROACH TO CORRECT THE PROXIMITY EFFECT IN ELECTRON-BEAM PROXIMITY PRINTING
    NEHMIZ, P
    BOHLEN, H
    GRESCHNER, J
    BRETSCHER, E
    VETTIGER, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1291 - 1295
  • [24] PROXIMITY EFFECT CORRECTIONS IN ELECTRON-BEAM LITHOGRAPHY
    PARIKH, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C157 - C157
  • [25] Proximity effect correction in projection electron beam lithography (scattering with angular limitation projection electron-beam lithography)
    Liddle, JA
    Watson, GP
    Berger, SD
    Miller, PD
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6672 - 6678
  • [26] Proximity effect correction in projection electron beam lithography (scattering with angular limitation projection electron-beam lithography)
    Liddle, J.Alexander
    Watson, G.Patrick
    Berger, Steven D.
    Miller, Peter D.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (12 B): : 6672 - 6678
  • [27] QUANTITATIVE LITHOGRAPHIC PERFORMANCE OF PROXIMITY CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY
    BOJKO, RJ
    HUGHES, BJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1909 - 1913
  • [28] PROXY - A NEW APPROACH FOR PROXIMITY CORRECTION IN ELECTRON-BEAM LITHOGRAPHY
    ARISTOV, VV
    ERKO, AI
    GAIFULLIN, BN
    SVINTSOV, AA
    ZAITSEV, SI
    JEDE, RR
    RAITH, HF
    MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) : 413 - 416
  • [29] Proximity-effect correction in electron-beam lithography on metal multi-layers
    Hyunjung Yi
    Joonyeon Chang
    Journal of Materials Science, 2007, 42 : 5159 - 5164
  • [30] CHARACTERIZATION OF A POSITIVE RESIST AND THE APPLICATION OF PROXIMITY EFFECT CORRECTION IN ELECTRON-BEAM DIRECT WRITE
    TAN, ZCH
    STANDIFORD, K
    LEM, HY
    NURMI, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 3099 - 3103