FORMATION OF TISI2 BY ELECTRON-BEAM ANNEALING OF ARSENIC IMPLANTED TITANIUM FILMS ON SILICON SUBSTRATES

被引：6

作者：

MAYDELLONDRUSZ, EA ^{[1
]}

HARPER, RE ^{[1
]}

WILSON, IH ^{[1
]}

STEPHENS, KG ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

VACUUM | 1984年 / 34卷 / 10-1期

关键词：

D O I：

10.1016/0042-207X(84)90185-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：995 / 999

页数：5

共 12 条

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OSBURN CM, 1982, P INT S VLSI SCI TEC, P221

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REVESZ P, 1983, J APPL PHYS, V54, P1860, DOI 10.1063/1.332237

[9] ION-BEAM INDUCED METASTABLE PT2SI3 PHASE .1. FORMATION, STRUCTURE, AND PROPERTIES [J].

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[10]

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