MECHANICAL STRENGTH OF SILICON-CRYSTALS AS A FUNCTION OF THE OXYGEN CONCENTRATION

被引：89

作者：

YONENAGA, I ^{[1
]}

SUMINO, K ^{[1
]}

HOSHI, K ^{[1
]}

机构：

[1] SONY CORP, SEMICOND GRP, ATSUGI, KANAGAWA 243, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.334272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2346 / 2350

页数：5

共 15 条

[1] IMAI M, 1983, PHILOS MAG A, V47, P599, DOI 10.1080/01418618308245248
[2] IMPURITY CLUSTERING EFFECTS ON DISLOCATION GENERATION IN SILICON
PATEL, JR
[J]. DISCUSSIONS OF THE FARADAY SOCIETY, 1964, (38): : 201 - &
[3] OXYGEN PRECIPITATION AND STACKING-FAULT FORMATION IN DISLOCATION-FREE SILICON
PATEL, JR
JACKSON, KA
REISS, H
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5279 - 5288
[4] MECHANICAL STRENGTH OF OXYGEN-DOPED FLOAT-ZONE SILICON-CRYSTALS
SUMINO, K
YONENAGA, I
YUSA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) : L763 - L766
[5] EFFECTS OF NITROGEN ON DISLOCATION BEHAVIOR AND MECHANICAL STRENGTH IN SILICON-CRYSTALS
SUMINO, K
YONENAGA, I
IMAI, M
ABE, T
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5016 - 5020
[6] INSITU X-RAY TOPOGRAPHIC STUDIES OF THE GENERATION AND THE MULTIPLICATION PROCESSES OF DISLOCATIONS IN SILICON-CRYSTALS AT ELEVATED-TEMPERATURES
SUMINO, K
HARADA, H
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06): : 1319 - 1334
[7] SUMINO K, 1983, PHILOS MAG A, V47, P753, DOI 10.1080/01418618308245262
[8] ORIGIN OF THE DIFFERENCE IN THE MECHANICAL STRENGTHS OF CZOCHRALSKI-GROWN SILICON AND FLOAT-ZONE-GROWN SILICON
SUMINO, K
HARADA, H
YONENAGA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L49 - L52
[9] DIFFERENCE IN THE MECHANICAL STRENGTHS OF DISLOCATION-FREE CRYSTALS OF CZOCHRALSKI SILICON AND FLOAT-ZONE SILICON
SUMINO, K
YONENAGA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (09) : L685 - L688
[10] SUMINO K, 1981, SEMICONDUCTOR SILICO, P208

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