FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON

被引：429

作者：

HU, SM ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV, E FISHKILL FACILITY, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1567 / 1573

页数：7

共 34 条

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[7] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

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[8] STACKING-FAULTS IN (100) EPITAXIAL SILICON CAUSED BY HF AND THERMAL OXIDATION AND EFFECTS ON P-N-JUNCTIONS [J].

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[9]

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[10]

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