NEW SILYLATION BILAYER RESIST SYSTEM EMPLOYING PHOTOCHEMICAL SELECTIVE RESIST SILYLATION

被引：0

作者：

MIMURA, Y ^{[1
]}

KOTAKA, I ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 6A期

关键词：

LITHOGRAPHY; SILYLATION; PHOTOCHEMICAL; BILAYER; RESIST; CHLOROALKYLSILANE; LSI; SIBIS;

D O I：

10.1143/JJAP.33.3640

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes a new silylation bi-layer resist system (SIBIS) that employs our previously reported photochemical selective silylation technique. Several different types of SIBIS are presented: normal-transfer SIBIS, image-reversal SIBIS, two-way normal-transfer/image-reversal SIBIS using the same resist materials, dry-development SIBIS, and SIBIS that uses an antireflective undercoating as a bottom layer. These SIBISs are applicable to optical, e-beam, and X-ray lithographies with proper selection of top-layer resist materials. This investigation primarily focuses on the top- and bottom-layer materials and silylation process conditions. Each of the SIBIS processes demonstrate fine pattern fabrication capability. The usefulness and superiority of SIBIS for LSI fabrication is confirmed.

引用

页码：3640 / 3647

页数：8

共 11 条

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