IMPACT IONIZATION AT NONUNIFORMLY HEATED N+-P AND P+-N JUNCTIONS

被引：0

作者：

DOBROVOLSKII, VN

PALTSEV, IE

机构：

来源：

SEMICONDUCTORS | 1994年 / 28卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The impact ionization of electrons and holes in nonuniformly heated silicon samples with n+-p and p+-n junctions has been studied. The purpose of this study was to test the theory derived by Dobrovol'skii and Gryaznov [Sov. Phys. Semicond. 26, 766 (1992)]. In accordance with a conclusion of the theory, a change in the type of junction at a fixed direction of the temperature gradient leads to a change in the sign of the current increment due to the heating.

引用

页码：160 / 162

页数：3

共 50 条

[41] The Effect of Dipole Boron Centers on the Electroluminescence of Nanoscale Silicon p+-n Junctions
Bagraev, Nikolay
Klyachkin, Leonid
Kuzmin, Roman
Malyarenko, Anna
Mashkov, Vladimir
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 2014, 1583 : 28 - 32
[42] INFLUENCE OF DEEP-LEVEL IMPURITIES ON ADMITTANCE OF GAP P+-N JUNCTIONS
KRISPIN, P
MAEGE, J
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02): : 535 - 542
[43] LOWERING OF THE INSTABILITY THRESHOLD OF A HOMOGENEOUS AVALANCHE BREAKDOWN OF P+-N JUNCTIONS IN SILICON
MELNIKOVA, YS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 40 - 43
[44] ANOMALOUS LOW-VOLTAGE BREAKDOWN IN ALLOYED GERMANIUM P+-N JUNCTIONS
TOKUYAMA, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (08) : C188 - C188
[45] PHOTOACOUSTIC AND OBIC MEASUREMENTS ON PLANAR HIGH-VOLTAGE P+-N JUNCTIONS
FLOHR, T
HELBIG, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (10) : 1683 - 1686
[46] Subnanosecond impact-ionization switching of silicon structures without p–n junctions
N. I. Podolska
P. B. Rodin
Technical Physics Letters, 2017, 43 : 527 - 530
[47] PERFORMANCE OF P+-N HGCDTE PHOTODIODES
ROGALSKI, A
JOZWIKOWSKA, A
JOZWIKOWSKI, K
RUTKOWSKI, J
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S289 - S292
[48] Pulse characteristics of Hg0.8Cd0.2Te n+-p junctions
I. S. Virt
Technical Physics, 1997, 42 : 841 - 844
[49] Nonequilibrium processes in Hg1-xCdxTe n+-p junctions in a magnetic field
Virt, IS
TECHNICAL PHYSICS LETTERS, 1997, 23 (10) : 813 - 815
[50] SPECTRAL SENSITIVITY CALCULATIONS ON N+-P AND N+-P-P+ SILICON SOLAR-CELLS
DHANASEKARAN, PC
VAYA, PR
GOPALAM, BSV
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02): : 693 - 700

← 1 2 3 4 5 →