IMPACT IONIZATION AT NONUNIFORMLY HEATED N+-P AND P+-N JUNCTIONS

被引：0

作者：

DOBROVOLSKII, VN

PALTSEV, IE

机构：

来源：

SEMICONDUCTORS | 1994年 / 28卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The impact ionization of electrons and holes in nonuniformly heated silicon samples with n+-p and p+-n junctions has been studied. The purpose of this study was to test the theory derived by Dobrovol'skii and Gryaznov [Sov. Phys. Semicond. 26, 766 (1992)]. In accordance with a conclusion of the theory, a change in the type of junction at a fixed direction of the temperature gradient leads to a change in the sign of the current increment due to the heating.

引用

页码：160 / 162

页数：3

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