STRAINED-INGAASP MQW ELECTROABSORPTION MODULATOR INTEGRATED DFB LASER

被引：47
作者：
SATO, K
KOTAKA, I
WAKITA, K
KONDO, Y
YAMAMOTO, M
机构：
[1] NTT Opto-electronics Laboratories, Kanagawa Pref., 243-01, 3-1, Morinosato Wakamiya, Atsugi-shi
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 12期
关键词：
OPTICAL MODULATION; LASERS; INTEGRATED OPTOELECTRONICS; EPITAXY AND EPITAXIAL GROWTH;
D O I：
10.1049/el:19930726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The monolithic integration of a strained-InGaAsP MQW electroabsorption modulator and a DFB laser using only two-step MOVPE growth is described. The extinction ratio is 20 dB with a low-driving voltage of 1.4 V for an optical power density of 10(2) kW/cm2.
引用
收藏
页码：1087 / 1089
页数：3
相关论文
共 11 条
12