SOLVING AN INTERFACE STRUCTURE BY ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION - THE GAAS(001)-CDTE(111) INTERFACE

被引：35
作者：
BOURRET, A
FUOSS, P
FEUILLET, G
TATARENKO, S
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] UNIV JOSEPH FOURIER,CNRS,SPECT PHYS LAB,GRENOBLE,FRANCE
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.70.311
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By a combination of high-resolution imaging and grazing-incidence x-ray diffraction at the GaAs(001)-CdTe(111) heterostructure we solve the atomic structure at the interface. We measure a square-root2(2x9) reconstructed unit cell and show that only three monolayers are involved in the interface relaxation. We deduce the first nearest neighbors of each atomic species at the interface and describe how they differ from the initial adsorbed layer on a bare GaAs(001) surface. This structure is compatible with two electrons per bond at any atom.
引用
收藏
页码：311 / 314
页数：4
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