GROWTH OF EPITAXIAL PB(ZR,TI)O3 FILMS BY PULSED LASER DEPOSITION

被引：59
|
作者：
LEE, J [1 ]
SAFARI, A [1 ]
PFEFFER, RL [1 ]
机构：
[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期
关键词：
D O I：
10.1063/1.108438
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 muC/CM2 and 53 kV/cm. A large internal bias field ( 12 kV/cm) was observed in the as-deposited state of the undoped PZT films.
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页码：1643 / 1645
页数：3
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