TRANSFORM BASED PROXIMITY CORRECTIONS - EXPERIMENTAL RESULTS AND COMPARISONS

被引：15
作者：
HASLAM, ME
MCDONALD, JF
机构：
[1] Rensselaer Polytechnic Inst, Troy,, NY, USA, Rensselaer Polytechnic Inst, Troy, NY, USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词：
D O I：
10.1116/1.583372
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
LITHOGRAPHY
引用
收藏
页码：168 / 175
页数：8
相关论文
共 9 条
[1]   PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].
CHANG, THP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275
[2]   AN IMAGE-PROCESSING APPROACH TO FAST, EFFICIENT PROXIMITY CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY [J].
CHOW, DGL ;
MCDONALD, JF ;
KING, DC ;
SMITH, W ;
MOLNAR, K ;
STECKL, AJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1383-1390
[3]  
CHOW DGL, 1983, MICROCIRCUIT ENG, V83, P65
[4]   EXPOSURE MODEL FOR ELECTRON-SENSITIVE RESISTS [J].
GREENEICH, JS ;
VANDUZER, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (05) :286-299
[5]   2-DIMENSIONAL HAAR THINNING FOR DATA-BASE COMPACTION IN FOURIER PROXIMITY CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY [J].
HASLAM, ME ;
MCDONALD, JF ;
KING, DC ;
BOURGEOIS, M ;
CHOW, DGL ;
STECKL, AJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :165-173
[6]  
KERN DP, 1980, 9TH P INT C EL ION B
[7]   APPLICATION OF THE GHOST PROXIMITY EFFECT CORRECTION SCHEME TO ROUND BEAM AND SHAPED BEAM ELECTRON LITHOGRAPHY SYSTEMS [J].
OWEN, G ;
RISSMAN, P ;
LONG, MF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :153-158
[8]   PROXIMITY EFFECT CORRECTION FOR ELECTRON-BEAM LITHOGRAPHY BY EQUALIZATION OF BACKGROUND DOSE [J].
OWEN, G ;
RISSMAN, P .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3573-3581
[9]  
PARIKH M, 1978, 8TH P INT C EL ION B, P371
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