INSITU GROWTH OF YBA2CU3O7-X HIGH-TC SUPERCONDUCTING THIN-FILMS DIRECTLY ON SAPPHIRE BY PLASMA-ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：21

作者：

CHERN, CS

ZHAO, J

LI, YQ

NORRIS, P

KEAR, B

GALLOIS, B

机构：

[1] EMCORE CORP,SOMERSET,NJ 08873

[2] RUTGERS STATE UNIV,PISCATAWAY,NJ 08854

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 07期

关键词：

D O I：

10.1063/1.104258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly c-axis oriented YBa2Cu3O7-x superconducting thin films have been, in situ, deposited directly on sapphire substrate by a remote microwave plasma-enhanced metalorganic chemical vapor deposition process (PE-MOCVD). The films were deposited at a substrate temperature of 730°C followed by a fast cooling. The as-deposited films show attainment of zero resistance at 82 K and have critical current density of 104 A/cm2 at 70 K. ac susceptibility measurement indicated that the films contain a single superconducting phase. PE-MOCVD was carried out in a commercial-scale MOCVD reactor with capability of uniform deposition over 100 cm2 per growth run.

引用

页码：721 / 723

页数：3

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