ELECTRONIC-STRUCTURE AND BAND DISCONTINUITIES IN THE INAS-GAAS SYSTEM

被引：18

作者：

OLOUMI, M

MATTHAI, CC

机构：

[1] Dept. of Phys., Univ. of Wales, College of Cardiff

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 23期

关键词：

D O I：

10.1088/0953-8984/2/23/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic band structures of the lattice mismatched InAs/GaAs system has been calculated for three different lattice constants using ab initio pseudopotentials. The effect of strain on the band discontinuities has been investigated with respect to the interface interlayer separation as well as the strain. The superlattice electronic structure is examined within the context of interface states and charge localisation.

引用

页码：5153 / 5160

页数：8

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