SCHOTTKY-BARRIER HEIGHT OF SPUTTERED HFN CONTACTS ON SILICON

被引：1

作者：

PAN, ETS

NICOLET, MA

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 08期

关键词：

D O I：

10.1016/0038-1101(85)90063-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：775 / 777

页数：3

共 14 条

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[5]

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[6]

HOUGHTON DC, 1984, MATERIALS RES SOC S, V25, P149

[7]

Maenpaa M., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P518

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BRUNNSCHWEILER, A .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :47-50

[9] CHARACTERISTICS OF DC MAGNETRON, REACTIVELY SPUTTERED TINX FILMS FOR DIFFUSION-BARRIERS IN III-V SEMICONDUCTOR METALLIZATION [J].

NOEL, JP ;

HOUGHTON, DC ;

ESTE, G ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :284-287

[10] MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].

NORDE, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :5052-5053

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