SCHOTTKY-BARRIER HEIGHT OF SPUTTERED HFN CONTACTS ON SILICON

被引：1
作者：
PAN, ETS
NICOLET, MA
机构：
来源：
SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 08期
关键词：
D O I：
10.1016/0038-1101(85)90063-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：775 / 777
页数：3
相关论文
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