SILICON PIN DIODE AS MICROWAVE RADAR PROTECTOR AT MEGAWATT LEVELS

[1] CRANNA NG, 1959, DA36039SC73224 USARO

[2] FISHER RM, PRIVATE COMMUNICATIO

[3] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[4] GARVER RV, 1961, IRE T MICROWAVE THEO, VMTT9, P224

[5] GARVER RV, 1962, IRE T MICROWAVE THEO, VMT10, P302

[6] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[7] HUNTON JK, 1962, IRE T, VMT10, P262

[8] VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J]. PHYSICAL REVIEW, 1961, 121 (01): : 26 - &

[9] CURRENT-VOLTAGE HARACTERISTICS OF FORWARD BIASED LONG P-I-N STRUCTURES [J]. PHYSICAL REVIEW, 1961, 121 (01): : 37 - &

[10] LEENOV D, 1961, FEB ISSCC, P84

[1] CRANNA NG, 1959, DA36039SC73224 USARO

[2] FISHER RM, PRIVATE COMMUNICATIO

[3] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[4] GARVER RV, 1961, IRE T MICROWAVE THEO, VMTT9, P224

[5] GARVER RV, 1962, IRE T MICROWAVE THEO, VMT10, P302

[6] POWER RECTIFIERS AND TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518

[7] HUNTON JK, 1962, IRE T, VMT10, P262

[8] VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J]. PHYSICAL REVIEW, 1961, 121 (01): : 26 - &

[9] CURRENT-VOLTAGE HARACTERISTICS OF FORWARD BIASED LONG P-I-N STRUCTURES [J]. PHYSICAL REVIEW, 1961, 121 (01): : 37 - &

[10] LEENOV D, 1961, FEB ISSCC, P84