PIEZOELECTRIC PROPERTIES AND ELASTIC-CONSTANTS OF H-4 AND 6H SIC AT TEMPERATURES 4-K TO 320-K

被引：43

作者：

KARMANN, S ^{[1
]}

HELBIG, R ^{[1
]}

STEIN, RA ^{[1
]}

机构：

[1] SIEMANS RES LABS,D-8520 ERLANGEN,FED REP GER

来源：

关键词：

D O I：

10.1063/1.344477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3922 / 3924

页数：3

共 11 条

[1] SOME ELASTIC CONSTANTS OF SILICON CARBIDE
ARLT, G
SCHODDER, GR
[J]. JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 1965, 37 (02) : 384 - &
[2] ARLT G, 1964, INT ELEKTRON RUNDSCH, V9, P493
[3] BECHMANN R, 1958, P IRE, V36, P764
[4] CADY WG, 1946, PIEZOELECTRICITY
[5] PHONON DISPERSION CURVES BY RAMAN SCATTERING IN SIC POLYTYPES 3C,4H,6H,15R,AND 21R
FELDMAN, DW
PARKER, JH
CHOYKE, WJ
PATRICK, L
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 787 - &
[6] RAMAN SCATTERING IN 6H SIC
FELDMAN, DW
PARKER, JH
CHOYKE, WJ
PATRICK, L
[J]. PHYSICAL REVIEW, 1968, 170 (03): : 698 - &
[7] THERMAL EXPANSION OF SILICON AND ZINE OXIDE (I)
IBACH, H
[J]. PHYSICA STATUS SOLIDI, 1969, 31 (02): : 625 - +
[8] THERMAL EXPANSION OF SILICON AND ZINE OXIDE (2)
IBACH, H
[J]. PHYSICA STATUS SOLIDI, 1969, 33 (01): : 257 - &
[9] TAYLOR A, 1960, SILICON CARBIDE 1959
[10] VANDAAL HJ, 1965, PHILIPS RES REP S, V3, P76