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- [2] PREPARATION BY FLOATING ZONE METHOD, OF REFRACTORY OXIDE MONOCRYSTALS, IN PARTICULAR OF GALLIUM OXIDE, AND STUDY OF SOME OF THEIR PROPERTIES REVUE INTERNATIONALE DES HAUTES TEMPERATURES ET DES REFRACTAIRES, 1971, 8 (3-4): : 291 - +
- [3] FORMATION OF GALLIUM MICROINCLUSIONS IN GAAS MONOCRYSTALS IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1988, 31 (02): : 32 - 35
- [4] ELABORATION OF ALUMINA MONOCRYSTALS BY FLOATING-ZONE METHOD COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES SERIE C, 1968, 266 (26): : 1767 - +
- [5] PROPERTIES OF OHMIC CONTACTS TO GALLIUM ANTIMONIDE MONOCRYSTALS, GROWN BY GAS-TRANSPORT REACTION METHODS PRIBORY I TEKHNIKA EKSPERIMENTA, 1974, (04): : 200 - 201
- [7] TWIN FORMATION AND DISLOCATIONAL DISTRIBUTION DURING GROWTH OF PROFILED INDIUM ANTIMONIDE MONOCRYSTALS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1971, 35 (03): : 495 - &
- [8] GROWTH DEFECTS IN INDIUM ANTIMONIDE MONOCRYSTALS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1971, 35 (03): : 490 - +
- [10] APPARATUS FOR THE FLOATING-ZONE REFINING OF GALLIUM ARSENIDE JOURNAL OF SCIENTIFIC INSTRUMENTS, 1960, 37 (11): : 410 - 414