GRAPHICAL DETERMINATION OF BARRIER HEIGHT AND EXCESS TEMPERATURE OF A SCHOTTKY BARRIER

被引：35

作者：

PADOVANI, FA

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来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 02期

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D O I：

10.1063/1.1708287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：921 / &

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[1] EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].

CROWELL, CR ;

SZE, SM ;

SPITZER, WG .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&

[2] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&

[3]

HILSUM C, 1961, SEMICONDUCTING 35 CO, P172

[4] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[5] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J].

MEAD, CA ;

SPITZER, WG .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :471-&

[6] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

SUMNER, GG .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3744-&