CURRENT FLUCTUATIONS AND SILICON-OXIDE WEAR-OUT IN METAL-OXIDE-SEMICONDUCTOR TUNNEL-DIODES

被引：64

作者：

FARMER, KR ^{[1
]}

SALETTI, R ^{[1
]}

BUHRMAN, RA ^{[1
]}

机构：

[1] CNR,CTR STUDI METODI & DISPOSIT RADIOTRANSMISS,I-56100 PISA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1749 / 1751

页数：3

共 9 条

[1] LOCALIZED-STATE INTERACTIONS IN METAL-OXIDE-SEMICONDUCTOR TUNNEL-DIODES [J].

FARMER, KR ;

ROGERS, CT ;

BUHRMAN, RA .

PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2255-2258

[2] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

GREEN, MA ;

KING, FD ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

[3] TUNNELING IN THIN MOS STRUCTURES [J].

MASERJIAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :996-1003

[4] BEHAVIOR OF THE SI/SIO2 INTERFACE OBSERVED BY FOWLER-NORDHEIM TUNNELING [J].

MASERJIAN, J ;

ZAMANI, N .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :559-567

[5] LOW-FREQUENCY NOISE IN SILICON GATE METAL-OXIDE-SILICON CAPACITORS BEFORE OXIDE BREAKDOWN [J].

NERI, B ;

OLIVO, P ;

RICCO, B .

APPLIED PHYSICS LETTERS, 1987, 51 (25) :2167-2169

[6]

NGUYEN TN, 1987, 1987 P IEEE INT REL, P66

[7] RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON [J].

NULMAN, J ;

KRUSIUS, JP ;

GAT, A .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :205-207

[8] LOW-VOLTAGE CURRENT-VOLTAGE RELATIONSHIP OF TUNNEL JUNCTIONS [J].

SIMMONS, JG .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :238-&

[9] THE RELATION BETWEEN POSITIVE CHARGE AND BREAKDOWN IN METAL-OXIDE-SILICON STRUCTURES [J].

WEINBERG, ZA ;

NGUYEN, TN .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1947-1956

← 1 →